SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal, capable of reducing COP density without sacrificing productivity. SOLUTION: This method for producing a silicon single crystal comprises, in growing the silicon single crystal S by a Czochralski method, pulling the single crystal at a pulling rate in which variationΔ(V/G) of V/G value in the crystal diameter direction is <=10% when the pulling rate of the single crystal is V (mm/minute) and a temperature gradient at a crystal side at a solid-liquid interface between a silicon melt and the crystal is G ( deg.C/mm) and an oxidation induced stacking fault occurring in a ring shape in a thermal oxidation treatment is eliminated in the outer periphery of wafer. A cylinder or funnel 22 is arranged above the surface of silicon melt, the relation between an inner diameter D at the bottom of the cylinder or the funnel and a diameter d of a crystal which is being grown is D<2d and the relation between D and d and a distance L from the bottom of the cylinder or the funnel to the surface of the silicon melt is L>(D-d)/2.