发明名称 DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor
摘要 In a method for manufacturing a capacitor including a lower electrode, a ferroelectric layer formed on the lower electrode, and an upper electrode formed on the ferroelectric layer, at least one of the lower and upper electrodes is made of laminated metal and conductive oxide. The laminated metal and conductive oxide are deposited by a DC magnetron reactive sputtering process using one metal target and mixture gas including oxygen wherein a ratio of oxygen in the mixture gas and a substrate temperature are definite and a DC input power is changed depending on the metal and the conductive oxide.
申请公布号 US6146906(A) 申请公布日期 2000.11.14
申请号 US19990397199 申请日期 1999.09.16
申请人 NEC CORPORATION 发明人 INOUE, NAOYA;HAYASHI, YOSHIHIRO
分类号 H01L27/10;C23C14/00;C23C14/08;H01L21/02;H01L21/203;H01L21/285;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/00;H01L21/824;H01L21/44 主分类号 H01L27/10
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