发明名称 |
DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor |
摘要 |
In a method for manufacturing a capacitor including a lower electrode, a ferroelectric layer formed on the lower electrode, and an upper electrode formed on the ferroelectric layer, at least one of the lower and upper electrodes is made of laminated metal and conductive oxide. The laminated metal and conductive oxide are deposited by a DC magnetron reactive sputtering process using one metal target and mixture gas including oxygen wherein a ratio of oxygen in the mixture gas and a substrate temperature are definite and a DC input power is changed depending on the metal and the conductive oxide.
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申请公布号 |
US6146906(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19990397199 |
申请日期 |
1999.09.16 |
申请人 |
NEC CORPORATION |
发明人 |
INOUE, NAOYA;HAYASHI, YOSHIHIRO |
分类号 |
H01L27/10;C23C14/00;C23C14/08;H01L21/02;H01L21/203;H01L21/285;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/00;H01L21/824;H01L21/44 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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