发明名称 |
Method of making semiconductor device having sacrificial salicidation layer |
摘要 |
The present invention is directed to a transistor having a stacked silicide metal and method of making same. In general, the method comprises forming a layer of nitrogen-bearing silicon dioxide above the gate conductor and the source and drain regions of a transistor. In one illustrative embodiment, the method further comprises forming a layer of titanium above at least the surface of the gate conductor and the source and drain regions. Thereafter, a layer of cobalt is formed above the layer of titanium. The transistor is then subjected to a heat treating process such that at least the layer of cobalt forms a metal silicide. Also disclosed herein is a partially formed transistor comprised of a gate conductor, a source region and a gate region. In one illustrative embodiment, the transistor is further comprised of a layer of nitrogen-bearing silicon dioxide formed above the gate conductor and the source and drain regions. The transistor further comprises a layer of titanium positioned adjacent the layer of nitrogen-bearing silicon dioxide and a layer of cobalt positioned adjacent the layer of titanium.
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申请公布号 |
US6146983(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19980193619 |
申请日期 |
1998.11.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER, MARK I.;HAUSE, FREDERICK N.;MAY, CHARLES E. |
分类号 |
H01L21/265;H01L21/28;H01L21/285;H01L21/336;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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