发明名称 Solid-state image sensor
摘要 The present invention provides a solid-state image sensor comprising a source follower amplifier on a single chip capable of preventing a gain loss caused by a back gate effect. In the solid-state image sensor including multi-stage single-chip source follower amplifier, one stage of the multi-stage source follower amplifier has a load transistor 5 whose source and gate are connected to an output signal 3 via a capacitor 7, and a DC voltage 6 is applied via a resistor 8 having a high resistance.
申请公布号 US6147556(A) 申请公布日期 2000.11.14
申请号 US19980185547 申请日期 1998.11.04
申请人 NEC CORPORATION 发明人 NAKANO, TAKASHI
分类号 H01L27/146;H01L21/8234;H01L27/088;H03F3/50;H04N5/335;H04N5/369;H04N5/372;H04N5/374;(IPC1-7):H03F3/16 主分类号 H01L27/146
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