发明名称 |
Light-impermeable, high purity silicon carbide material, a light shielding member for a semiconductor-treating apparatus, and a semiconductor-treating apparatus |
摘要 |
A light-impermeable, high purity silicon carbide material including polycrystals of silicon carbide as a main ingredient, wherein the silicon carbide material has a porosity of not more than 0.1%, the content of each of metal elements contained in the silicon carbide material is not more than 200 ppb, a weight ratio of silicon relative to the entire weight of the silicon carbide material is 69.00 to 69.90 wt %, and a light transmittance of the silicon carbide material in a wavelength range of 0.4 to 25 mu m is not more than 0.05% per a thickness of 0.5 mm.
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申请公布号 |
US6147020(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19990412959 |
申请日期 |
1999.10.05 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
NISHIOKA, MASAO;KATO, NAOTAKA |
分类号 |
G01N23/20;C04B35/565;C23C16/01;C23C16/32;C23C16/44;C30B31/10;(IPC1-7):C04B35/52 |
主分类号 |
G01N23/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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