| 摘要 |
The method according to this invention, of manufacturing a semiconductor device includes forming a polysilicon layer on a silicon substrate, forming a first resist pattern on the polysilicon layer, introducing impurity ions into the polysilicon layer with the first resist pattern used as a mask to form a high density impurity layer within the polysilicon layer, forming a second resist pattern on the polysilicon layer at a region where the first resist pattern is formed, the second resist pattern being greater than the first resist pattern so that the region where the first resist pattern is formed and a peripheral region thereof is covered by the second resist pattern, and etching the polysilicon layer including the high density impurity layer using the second resist pattern as a mask. From the above method, a portion of the polysilicon layer located at a region not covered by the second resist layer and the high density impurity layer are etched.
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