| 发明名称 |
Method of fabricating a dynamic random access memory device |
| 摘要 |
A method of fabricating a dynamic random access memory is disclosed, which mainly utilizing selective liquid-phase deposition process to form an insulation layer on the gate electrode structure.
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| 申请公布号 |
US6146940(A) |
申请公布日期 |
2000.11.14 |
| 申请号 |
US19970000967 |
申请日期 |
1997.12.30 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HONG, GARY |
| 分类号 |
H01L21/02;H01L21/316;H01L21/768;H01L21/8242;(IPC1-7):H01L21/824;H01L21/368 |
主分类号 |
H01L21/02 |
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