发明名称 |
Method of making silicon quantum wires |
摘要 |
A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in 20% aqueous hydrofluoric acid to produce a layer (5) microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.
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申请公布号 |
US6147359(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19920960694 |
申请日期 |
1992.10.14 |
申请人 |
THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND |
发明人 |
CANHAM, LEIGH-TREVOR;KEEN, JOHN MICHAEL;LEONG, WENG YEE |
分类号 |
H01L21/306;H01L29/06;H01L33/34;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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