| 摘要 |
PROBLEM TO BE SOLVED: To improve horizontal mode stability and service life characteristics with high power of a nitride semiconductor laser device, in order that it can be used as a light source for reading and writing of mass-storage media. SOLUTION: In this nitride semiconductor laser device, an active layer 9, a p-side clad layer 13 and a p-side contact layer 13 are stacked in sequence and a waveguide region shaped like a stripe whose width is 1-3 μm and whose deepest part is lower than the position, where the thickness of the p-side cladding layer 12 becomes 0.1 μm and higher than a light emitting layer, is formed through etching from the side of the p-side contact layer 13. |
