| 摘要 |
<p>PROBLEM TO BE SOLVED: To enhance the switching characteristics of an insulated gate field effect semiconductor device operable at high frequency by providing a channel forming region on a patterned non-single crystal semiconductor film and specifying the field between a drain region and a gate electrode containing specified quantities of oxygen and hydrogen or halogen. SOLUTION: An amorphous non-single crystal semiconductor layer 2 added with hydrogen by 1 atm.% or above is formed on the upper surface of a quartz glass. A gate insulation film 3 is formed an undoped non-single crystal semiconductor containing oxygen by 5×1018 cm-3 or less and a gate electrode 4 is provided selectively thereon. Furthermore, impurity regions 7, 8 for source region and drain region are provided in a semiconductor 2 by ion implantation using the gate electrode 4 as a mask. Subsequently, hydrogen or halogen elements are left in a region doped with inactive impurities to obtain a polycrystal or single crystal semiconductor having crystallinity promoted by a channel forming region. Hysteresis is not recognized between gate-drain at a voltage of 3×106 cm-3 V/cm.</p> |
