THERMAL CONDUCTION TYPE SEED CRYSTAL FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL AND GROWTH OF SINGLE CRYSTAL BY THE THERMAL CONDUCTION TYPE SEED CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a single crystal by immersing a seed crystal in a melt and pulling and growing the single crystal without causing necking in the production of a semiconductor single crystal by a Czochralski method. SOLUTION: This thermal conduction type seed crystal 10 is constituted of a growing seed 1 whose lower end is immersed in a melt to grow a semiconductor single crystal, a thermal conduction member 2 which is attached to the growing seed 1 and immersed in the melt before the growing seed 1 is immersed in the melt to transfer the heat of the melt to the growing seed 1 and a quartz cylinder 3 for covering the thermal conduction member 2. The thermal conduction member 2 is attached to the growing seed 1 so as to surround the growing seed and has plural slits 2c arranged in the vertical direction from the lower part to the bottom part. The quartz cylinder 3 has the same number of inverted wedge-shaped notch parts as that of the slits 2c and wedge- shaped parts 3b formed between two adjoining notch parts are mutually different in length in the vertical direction.