| 摘要 |
PROBLEM TO BE SOLVED: To obtain an MRAM circuit of which a characteristic does not depend on dispersion of the characteristic of a memory cell depending on a place on a wafer. SOLUTION: This circuit is provide with row decoders 102, 103 decoding one part of an address, column decoders 104, 105 decoding the residual part of the address, plural sense lines 21, 22, 21r, 22r, 24, 25 connected to decoding terminals of the row decoders 102, 103, plural word lines 2a-2c connected to the decoding terminals of the column decoders, plural memory cells 21a-21c, 22a-22c, 23a-23c, plural reference cells 2ra-2rc, and the memory cell and the reference cell are provided with a magnetic resistance element. The plural sense lines and plural word lines intersect in a matrix state, the plural memory cells are connected to the sense line and the word line of an intersection in the intersections relating to one part of sense lines out of the intersections of plural sense lines and plural word lines, the plural reference cells are connected to the sense line and the word line of the intersection in the intersections relating to the other sense lines.
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