Modified chemical vapor deposition using independently controlled thermal sources

摘要

The deposition rate of MCVD processes is enhanced by applying at least a first and a second independently controlled heat source to a plurality of reactants which are used to form deposited particulate matter. The first heat source is adjusted so as to provide at least a specified rate of reaction for the reactants, and the second source is adjusted so as to provide at least a specified deposition rate for the particulate matter.