| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which designed to efficiently inject electrons in a floating gate and moreover, to efficiently draw the electrons from the floating gate, and to reduce power consumption. SOLUTION: A floating gate 6 on a tunnel oxide film 5 is divided into an N-type region 61 and a P-type region 62. For this, at the time of writing data, a depletion layer is formed in the region 61, but the depletion layer is not formed in the region 62. Therefore, electrons are efficiently injected in the region 62. On the other hand, at the time of erasing data, the depletion layer is formed in the region 62, but the depletion layer is not formed in the region 61. As the result, a drawing of the electrons from the region 61 can be efficiently performed.
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