| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to simply form a copper wiring just following a pattern in a semiconductor device, which is required a low-resistance wiring by the high integration of the device. SOLUTION: The surface of an insulating film 2 on a substrate 1 is covered with a protective film 3 having a resistance to a hydrofluoric acid. A contact hole 4 is provided in the films 3 and 2. A barrier material film 5a, such as a TiN film, is formed on the parts of the films 3 and 2 which are exposed through the hole 4 and on the film 3 to perform a wiring pattern, whereby a barrier metal layer 5 is formed on the exposed parts of the films 3 and 2 and the film 3. By dipping the semiconductor substrate formed with the layer 5 into the mixed solution of a catalyst material separable copper with the hydrofluoric acid, a catalyst material layer (a Pd layer 6) is made to adhere on the layer 5. After that, the substrate is dipped into a copper electrolyte solution, whereby a copper wiring 7 is formed on the layer 5.
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