发明名称 PRODUCTION OF SiC-Si COMPOSITE MATERIAL
摘要 PROBLEM TO BE SOLVED: To readily prepare a SiC-Si composite having high thermal-shock resistance and high strength at a relatively low temperature in a low cost by heat-treating Si3N4 as a Si source at a specific temperature in a vacuum atmosphere until it is molten and decomposed, and impregnating molded SiC bodies as aggregate with the formed Si until up to a specific proportion. SOLUTION: Si3N4 is heat-treated as a Si source in a temperature range of from 1,600 to 1,800 deg.C in a vacuum atmosphere of <=1 Torr, molten and decomposed. Then, a SiC molded body as an aggregate is impregnated with the Si generated by decomposition to prepare an SiC-Si composite material at a weight ratio of SiC: 65-90 wt.% to Si: 35-10 wt.%. This SiC molded bodies can be formed by kneading SiC particles together with a binder and water and the furnace material and jigs can be prevented from being damaged by erosion with energy saved. In addition, excessive Si can be inhibited from escaping from the SiC molded body and the step for removing off the remaining Si therein can be cut.
申请公布号 JP2000313668(A) 申请公布日期 2000.11.14
申请号 JP19990156886 申请日期 1999.04.27
申请人 TOKAI KONETSU KOGYO CO LTD 发明人 OSADA MITSUAKI;FUKUTANI YOSHIHITO
分类号 C04B35/565;C04B35/64;C04B35/65 主分类号 C04B35/565
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