POLYIMIDE PRECURSOR, PRODUCTION OF POLYIMIDE, PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION OF PATTERN AND ELECTRONIC PART

摘要

PROBLEM TO BE SOLVED: To produce a polyimide capable of exhibiting excellent heat resistance and low thermal expansibility and having a low residual stress when used as a surface protective film for silicon wafers by heating a specific polyimide precursor having high i radiation transmitting properties. SOLUTION: This polyimide precursor has a recurring unit represented by formula I [R and R' are each H or a monovalent organic group; X is represented by formula II (R1 to R4 are each H or a monovalent organic group); Y is a bi- or a polyalent organic group]. When the precursor is heated at 80-450 deg.C, the skeletal structure is changed and the formation of an aromatic ring and imide cyclization are carried out to produce a polyimide. The polyimide precursor is obtained by reacting a tetracarboxylic dianhyride represented by formula III (e.g. bicyclo [2.2.2]octa-2,5-diene-2,3,5,6-tetracarboxylic dianhydride) with a diamine capable of providing the structure of Y in formula I (e.g. 4,4'- diamino-2,2'-dimethylbiphenyl) in a polar solvent such as N-methyl-2-pyrrolidone at -20 to +40 deg.C for 1-10 h.