| 发明名称 |
Static random access memory |
| 摘要 |
An SRAM is provided with a high-resistance element for loading including a high-resistance portion, which extends onto adjacent memory cell. An interlayer insulating film is formed between the high-resistance portions.
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| 申请公布号 |
US6147387(A) |
申请公布日期 |
2000.11.14 |
| 申请号 |
US19980116889 |
申请日期 |
1998.07.16 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ISHIGAKI, YOSHIYUKI |
| 分类号 |
G11C11/412;H01L21/8244;H01L27/11;(IPC1-7):H01L29/76;H01L29/91;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
G11C11/412 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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