发明名称 Photoresist using dioxaspiro ring-substituted acryl derivatives
摘要 Disclosed is photoresist using dioxaspiro ring-substitued acryl derivatives, represented by the following chemical formula I or II. As matrix polymers, homopolymers of dioxaspiro ring-substitued acryl monomers or their copolymers with acryl monomers are provided. The deprotection of the dioxaspiro rings from the matrix polymers, usually accomplished by the action of a photoacid generator, causes a great change in the water solubility of the matrix, thereby allowing the matrix to be used for the photoresist required to have high sensitivity, resolution and contrast.
申请公布号 US6146811(A) 申请公布日期 2000.11.14
申请号 US19990364860 申请日期 1999.07.30
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KIM, JIN BAEK;PARK, JONG JIN;JANG, JI HYUN
分类号 G03F7/004;G03F7/038;G03F7/039;(IPC1-7):G03F7/004 主分类号 G03F7/004
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