发明名称 |
Photoresist using dioxaspiro ring-substituted acryl derivatives |
摘要 |
Disclosed is photoresist using dioxaspiro ring-substitued acryl derivatives, represented by the following chemical formula I or II. As matrix polymers, homopolymers of dioxaspiro ring-substitued acryl monomers or their copolymers with acryl monomers are provided. The deprotection of the dioxaspiro rings from the matrix polymers, usually accomplished by the action of a photoacid generator, causes a great change in the water solubility of the matrix, thereby allowing the matrix to be used for the photoresist required to have high sensitivity, resolution and contrast.
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申请公布号 |
US6146811(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19990364860 |
申请日期 |
1999.07.30 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
KIM, JIN BAEK;PARK, JONG JIN;JANG, JI HYUN |
分类号 |
G03F7/004;G03F7/038;G03F7/039;(IPC1-7):G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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地址 |
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