| 摘要 |
A storage device and a method of forming a storage device, includes depositing a metal layer on a substrate, and oxidizing the metal layer to form an oxide with a rutile structure on which a ferromagnetic material is selectively grown. The substrate may be substantially formed of either SiO2, Si3N4, or a compound of SiO2 and Si3N4. In another method, a method of forming a magnetic device, includes one of seeding a surface with one of Ti, Sn, and Ru islands having nanometer dimensions, and by exposing nanometer scale areas of the one of Ti, Sn, and Ru on a substrate, and coating the one of Ti, Sn, and Ru, with a ferromagnetic material. The surface may be substantially formed of either SiO2, Si3N4, or a compound of SiO2 and Si3N4. Similarly, the substrate may be substantially formed of either SiO2, Si3N4, or a compound of SiO2 and Si3N4.
|
