发明名称 |
Method of forming contact plug |
摘要 |
A method for preventing a contact plug on a semiconductor substrate from being poisoned. A part of the metal layer with a large and flat surface region is removed to result in a plurality of metal layers with smaller surface areas on the substrate. A first dielectric layer is formed on the metal layers. A spin-on-glass layer is formed on the first dielectric layer. The spin-on-glass layer is etched back until the first dielectric layer is exposed. A second dielectric layer is formed on the spin-on-glass layer. At lease an opening is formed to penetrate through the second dielectric layer, the spin-on-glass layer and the first dielectric layer. The opening is filled with a contact plug.
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申请公布号 |
US6146990(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19980152457 |
申请日期 |
1998.09.14 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
SUNG, SHU-JENG |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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