发明名称 |
Nonvolatile ferroelectric memory using selective reference cell |
摘要 |
A nonvolatile ferroelectric memory that reduces the number of cycles of reference cells to extend lifetime of memory. A reference cell of the memory is activated to provide a reference voltage to a sense amplifier only when the sense amplifier needs the reference voltage. The memory comprises a plurality of cells arranged in a matrix form and including memory cells and reference cells, and a plurality of sense amplifiers arranged in a row of the matrix, in which each sense amplifier compares voltages induced from a reference cell and a selected memory cell to read information stored in the selected memory cell, and in which each reference cell is activated only when both a selection signal from a column address and a word line connected to said reference cell are enabled.
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申请公布号 |
US6147896(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19990429752 |
申请日期 |
1999.10.28 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM, SHI-HO;KIM, BO-WOO;YU, BYOUNG-GON;LEE, WON-JAE |
分类号 |
G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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地址 |
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