发明名称 Nonvolatile ferroelectric memory using selective reference cell
摘要 A nonvolatile ferroelectric memory that reduces the number of cycles of reference cells to extend lifetime of memory. A reference cell of the memory is activated to provide a reference voltage to a sense amplifier only when the sense amplifier needs the reference voltage. The memory comprises a plurality of cells arranged in a matrix form and including memory cells and reference cells, and a plurality of sense amplifiers arranged in a row of the matrix, in which each sense amplifier compares voltages induced from a reference cell and a selected memory cell to read information stored in the selected memory cell, and in which each reference cell is activated only when both a selection signal from a column address and a word line connected to said reference cell are enabled.
申请公布号 US6147896(A) 申请公布日期 2000.11.14
申请号 US19990429752 申请日期 1999.10.28
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM, SHI-HO;KIM, BO-WOO;YU, BYOUNG-GON;LEE, WON-JAE
分类号 G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C11/22
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