| 摘要 |
PROBLEM TO BE SOLVED: To fine a semiconductor device by a method, wherein a gate electrode itself is reduced, and a space between the gate electrodes is narrowed. SOLUTION: In this manufacture, masking cobalt silicide films 7a, 7b, until a surface of a silicon oxide film 2 is exposed, sidewall silicon oxide films 9a, 9b, a silicon oxide film 4, and a polycrystalline silicon film 3 are etched and removed. Thus, a gate electrode composed of a polycide film containing the cobalt silicide films 7a, 7b and polycrystalline silicon films 3a, 3b is formed.
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