| 摘要 |
PROBLEM TO BE SOLVED: To reduce a circuit size and improve manufacturing efficiency by using a capacitor contact for forming a bit-line trench and by forming a conductive bit line that is electrically connected to a field effect transistor in the trench. SOLUTION: A capacitor 100 is fully insulated from a bit line 60 by a dielectric material 80, and the electrical short-circuiting between the bit line 60 and the capacitor 100 is prevented. Further, a capacitor contact 31 is fully insulated from the bit line 60 similarly by an insulation spacer 41. Further, since the spacer 41 is formed in an opening 40 for the bit line 60, the capacitor contact 31 cannot become smaller. Therefore, the capacitor contact 31 with higher importance retains its size and the bit line 60 with lower importance becomes somewhat smaller, thus manufacturing smaller stack structure and hence higher- density integrated circuit device. |
