PREPARATION OF OXIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for preparing an oxide single crystal having a stoichiometric composition at an inexpensive manufacturing cost by using metal Ga. SOLUTION: A raw material mixture 3 comprising metal Ga and an oxide compound is mixed in a dry state. The raw material mixture 3 is contained in a platinum crucible 5, heat-treated in air at about 500 deg.C and successively heat-treated in oxygen at about 1,000 deg.C to form Ga2O3 in the raw material mixture 3 and to prepare a powdery raw material oxide 4. The raw material oxide 4 is baked to prepare a powder crystal 7. The powder crystal 7 is used as a melt by a Czochralski method to pull a oxide single crystal.