发明名称 |
Cleaning gas |
摘要 |
A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
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申请公布号 |
US6147006(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US20000479057 |
申请日期 |
2000.01.07 |
申请人 |
CENTRAL GLASS COMPANY, LIMITED |
发明人 |
MOURI, ISAMU;TAMURA, TETSUYA;OHASHI, MITSUYA;KAWASHIMA, TADAYUKI |
分类号 |
H01L21/31;C23C16/44;C23F1/12;H01L21/304;H01L21/306;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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