发明名称 |
Modified multilayered metal line structure for use with tungsten-filled vias in integrated circuit structures |
摘要 |
A composite metal line structure for an integrated circuit structure on a semiconductor substrate is disclosed which comprises: a low resistance metal core layer; a first thin protective layer of electrically conductive material on the upper surface of the metal core layer capable of protecting the metal core layer from reaction with tungsten; a layer of tungsten formed over the first protective layer to function as an etch stop layer for vias subsequently formed in an overlying dielectric layer; and a second thin protective layer of electrically conductive material over the tungsten layer and capable of functioning as an antireflective coating (ARC). When a dielectric layer is formed over the composite metal line structure, tungsten-filled vias can be formed in the dielectric layer which will extend down through the second thin protective layer to provide direct electrical contact between the tungsten-filled via and the tungsten layer of the composite metal line structure, thereby providing a low resistance contact between the tungsten-filled via and the composite metal line structure.
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申请公布号 |
US6147409(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19980098019 |
申请日期 |
1998.06.15 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
HSIA, SHOULI STEVE;CHEN, FRED;TSAI, JIUNN-YANN |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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