| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a non-volatile semiconductor memory which can perform erasing and write-in at high speed as a whole device. SOLUTION: Each sub-bit line SBL0 and the like are provided with a sub-bit line potential control section 70 holding data written in a memory cell 31. During performing write-in in a block 40, a selection gate decoder 42 separates main bit lines MBL0-MBLn from the sub-bit line SBL0 and the like in the block 40a. Also, in the block 40a, output of word lines, a source line decorder 43, and the like are made a hold state, a command for the other block is neglected. Therefore, read-out, write-in, erasing, or the like can be performed by accessing a memory cell 31 in the other block.</p> |
