发明名称 |
HYBRID INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF AND ELECTRONIC DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To reduce inductance by a lead structure, miniaturize a hybrid integrated circuit device and reduce processes of manufacturing the hybrid integrated circuit device. SOLUTION: This circuit device 100 is provided with a wiring board obtained by forming circuit wiring 3 on a metal substrate 1 via an insulating film 2. The circuit wiring 3 is integrally formed on the substrate 1. The circuit wiring 3 is provided with leads 3A for external connection which are integrally formed and electrically connected therewith. A semiconductor chip 4 is electrically connected to the circuit wiring 3 with metal wires 5 and other electronic components 6A are electrically connected to the circuit wiring 3. The semiconductor chip 4, metal wires 5, the circuit wiring 3 on the wiring board and respective electrically connecting portions are sealed with a resin-sealed body 7.</p> |
申请公布号 |
JP2000315764(A) |
申请公布日期 |
2000.11.14 |
申请号 |
JP19990125849 |
申请日期 |
1999.05.06 |
申请人 |
HITACHI LTD |
发明人 |
NIITSU TOSHIJI;KOYAMA KENJI;IIZUKA MAMORU;MIKI OSAMU;ENDO TSUNEO;YAMADA TOMIO;INOUE KOICHI |
分类号 |
H01L25/00;H01L25/04;H01L25/18;(IPC1-7):H01L25/00 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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