发明名称 HYBRID INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF AND ELECTRONIC DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To reduce inductance by a lead structure, miniaturize a hybrid integrated circuit device and reduce processes of manufacturing the hybrid integrated circuit device. SOLUTION: This circuit device 100 is provided with a wiring board obtained by forming circuit wiring 3 on a metal substrate 1 via an insulating film 2. The circuit wiring 3 is integrally formed on the substrate 1. The circuit wiring 3 is provided with leads 3A for external connection which are integrally formed and electrically connected therewith. A semiconductor chip 4 is electrically connected to the circuit wiring 3 with metal wires 5 and other electronic components 6A are electrically connected to the circuit wiring 3. The semiconductor chip 4, metal wires 5, the circuit wiring 3 on the wiring board and respective electrically connecting portions are sealed with a resin-sealed body 7.</p>
申请公布号 JP2000315764(A) 申请公布日期 2000.11.14
申请号 JP19990125849 申请日期 1999.05.06
申请人 HITACHI LTD 发明人 NIITSU TOSHIJI;KOYAMA KENJI;IIZUKA MAMORU;MIKI OSAMU;ENDO TSUNEO;YAMADA TOMIO;INOUE KOICHI
分类号 H01L25/00;H01L25/04;H01L25/18;(IPC1-7):H01L25/00 主分类号 H01L25/00
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