SEMICONDUCTOR DEVICE AND FABRICATION THEREOF

摘要

PROBLEM TO BE SOLVED: To ensure a sufficient retaining capacity even if the pixel area per unit pixel is decreased by forming an organic insulation film on an insulated gate field effect transistor, forming a light shielding layer thereon and forming a retaining capacity of a dielectric layer coming into tight contact with the light shielding layer and a light reflecting electrode. SOLUTION: A passivation 133 is formed of single crystal silicon having relatively high resistance on a substrate and an organic resin insulation layer 134 is formed of polyimide, or the like. A light shielding layer 135 is then formed thereon using a film containing an element selected from aluminum, titanium or tantalum. In order to form a retaining capacitor employing the light shielding film as one electrode and a pixel electrode 139 as the other electrode in a pixel part, a dielectric layer 136 is formed on the light shielding layer 135 using a silicon oxide or nitride film. Since a retaining capacitor is formed of a dielectric layer coming into tight contact with a light shielding film and a pixel electrode arranged to be lapped partially over the light shielding film, high speed operation is realized with low power consumption.