| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable low-resistance gate wiring using aluminum by preventing damage to a gate electrode due to dilute hydrofluoric acid treatment which is performed for removing any oxide film naturally formed on the surface of a silicon film, in order to enhance reliability of electrical connections between a wiring metal and a source/drain region. SOLUTION: This device has a first gate electrode film 6 made of a material which is insoluble in hydrofluoric acid, a second gate electrode film 7 made of a material which has a lower specific resistance than that of the first gate electrode film 6, a layer insulation film 8, and a wiring metal film 9. Electrical connections between the first gate electrode film 6 and wiring metal film 9, and between the first gate electrode film 6 and second gate electrode film 7, are established. The layer insulation film 8 is used to separate the second gate electrode film 7 from the wiring metal film 9.</p> |
