发明名称 |
Method of fabricating shallow trench isolation (STI) |
摘要 |
A method of fabricating shallow trench isolation (STI) forms a trench in a substrate and a liner oxide layer in the trench. A first high density plasma chemical vapor deposition (HDPCVD) is performed to form a conformal oxide layer on the liner oxide layer, without applying bias to the substrate. A second HDPCVD is then performed to form an oxide layer that fills the trench and covers the conformal oxide layer on the conformal oxide layer.
|
申请公布号 |
US6146974(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19990348884 |
申请日期 |
1999.07.01 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIU, CHIH-CHIEN;TSAI, CHENG-YUAN;YANG, GWO-SHII;WU, JUAN-YUAN |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|