发明名称 Method of manufacturing semiconductor integrated circuit device
摘要 A method of manufacturing a semiconductor integrated circuit wherein a patterned wafer polishing machine for uniformly polishing a surface by chemical mechanical polishing is utilized which is provided with a head for holding a wafer and rubbing it on an abrasive surface. A pressure plate provided with vents is held by the head body which is provided with a gas inlet and an elastic film for sealing vents is provided on the end face on the side reverse to the gas inlet side of the pressure plate. A patterned wafer is held by the head as the wafer, pressed by action of the pressure of air from the gas inlet via the elastic film is pressed mechanically by the pressure plate. The polishing surface which is a principal plane on the patterned side of the wafer is mechanochemically polished by the abrasive surface.
申请公布号 US6147001(A) 申请公布日期 2000.11.14
申请号 US19970845398 申请日期 1997.04.24
申请人 HITACHI, LTD. 发明人 KIMURA, TAKESHI;ITO, HIDEFUMI;KOJIMA, HIROYUKI;KONISHI, NOBUHIRO;TAGUMA, YUUICHIROU;MITANI, SHINICHIRO
分类号 H01L21/336;H01L21/304;H01L21/3105;H01L21/321;H01L29/78;(IPC1-7):H01L21/302 主分类号 H01L21/336
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