| 摘要 |
PROBLEM TO BE SOLVED: To efficiently manufacture a semiconductor light emitting element whose light emitting efficiency can be made satisfactory starting from the state of a wafer. SOLUTION: A semiconductor light emitting element 24, on whose surface side electrodes 25 and 26 are formed in the state of a wafer, is mounted so as to be laterally placed on a surface mounting surface 21. At the cutting of the semiconductor light emitting element 24 from the wafer state by dicing, a chip-ceiling face 29 is finally cut. At the cutting of the chip-ceiling face 29, a chip bottom face 30 or the other side face are already cut so that an area for holding the semiconductor light emitting element 24 by an adhesive sheet or the like can be reduced, and the roughness of the surface to be cut by a dicing blade can be increased. Thus, the roughness of the surface of the chip ceiling face 29 can be increased, and probability that emitted lights 28 to be generated from a P-N junction face 27 are extracted to the outside part without being fully reflected on the inner face of the chip-ceiling face 29 can be increased, and attenuation in the chip of the semiconductor light emitting element 24 can be decreased, and light intensity can be increased. |
