发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To eliminate effects of ununiformity of a lower wiring structure such as a step, etc., when a photoresist pattern is formed by electron beam linear drawing. SOLUTION: The patterning step for applying an electron beam is provided with a correction step for changing a way of irradiation (irradiation quantity and position) of the electron beam in the respective areas where the structural body of a first wiring layer 1 forming a lower wiring structure exists, in consideration of the structural body on alignment in advance. Information on the structural body uses an information which an alignment system for conducting the patterning step or its upper system holds to the present.
申请公布号 JP2000315646(A) 申请公布日期 2000.11.14
申请号 JP19990125520 申请日期 1999.05.06
申请人 NEC CORP 发明人 TSUGAWA AKIHIKO
分类号 H01L21/768;G03F7/038;G03F7/039;G03F7/20;H01L21/027 主分类号 H01L21/768
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