| 摘要 |
PROBLEM TO BE SOLVED: To form a quantum dot of a nitride semiconductor such as GaN, InN, or AlN, InGaN, AlGaN, etc., while controlling its position. SOLUTION: A method for forming a position-controlled quantum dot of a nitride semiconductor in droplet epitaxy is provided with a first process, where by applying an external field to a surface of a substrate 1 that has surface energy lower than that of metal raw material, the surface condition of the substrate is modulated to modify the surface, a second process where the metal raw material is supplied to the substrate whose surface is modified in the first process to form a metal droplet 2 on the place whose surface is modified in crystal growth, and a third process, wherein by supplying nitrogen source onto the substrate on which the metal droplet 2 is formed in the second process, the metal droplet is nitrided to form the quantum dot 4 of the nitride semiconductor. |
