摘要 |
<p>PROBLEM TO BE SOLVED: To shorten time required for generation of a photomask to be used for manufacturing a semiconductor device. SOLUTION: A plotting data area is separated into plural mesh areas (ST1) and the mesh areas are retrieved (ST2). When the applicable mesh area exists (ST3), the mesh area is extracted. A representative graphic including an actual pattern and a representative graphic including a dummy pattern are set and at least one representative graphic is magnified so as to increase it by an interval d (ST4). A common area between the representative graphic areas at least on of which is magnified is calculated (ST6). When the common area exists (ST7), the common area is magnified so as to increase it by the interval d (ST8), the actual pattern and the dummy pattern which do not belong to the common area are excluded from a verifying object (ST9). When the actual pattern and the dummy pattern exist in the magnified common area (ST10), detailed verification (ST11) is performed.</p> |