| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial silicon substrate, where stable epilayer electrical resistivity distribution is obtained in an epilayer surface, at low cost. SOLUTION: In this method for manufacturing a substrate, polycrystalline silicon Ps is volatilized to form a silicon film on a rear surface 1r of a heavy- dopant silicon substrate 1. The substrate 1 and a susceptor 4, which have the relation where a curvature radius r of the substrate 1 is always larger than a curvature radius R of a spot facing 5 of the susceptor 4, at formation of the silicon film, are used. The curvature radius of curvature of the spot facing of the susceptor is 15-25 m.
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