发明名称 |
Czochralski pullers for manufacturing monocrystalline silicon ingots by controlling temperature at the center and edge of an ingot-melt interface |
摘要 |
Czochralski pullers are modified to grow perfect monocrystalline silicon ingots that are free of vacancy agglomerates and interstitial agglomerates, by modifying components of the Czochralski puller to produce a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and is also at least about equal to the temperature gradient at a diffusion length from the cylindrical edge of the ingot. By producing a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and that is also at least about equal to the temperature gradient at a diffusion length from the diffusion edge, an ingot-melt interface that is planar or is convex relative to the silicon melt may be produced. The ingot so pulled is sliced into a plurality of pure silicon wafers that may include point defects but that are free of vacancy agglomerates and interstitial agglomerates.
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申请公布号 |
US6146459(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19990320102 |
申请日期 |
1999.05.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JAE-GUN |
分类号 |
H01L21/322;C30B15/00;C30B15/14;C30B15/20;C30B29/06;H01L21/208;(IPC1-7):C30B35/00 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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