| 摘要 |
PURPOSE: A layout structure of a memory cell is provided to improve the chip integration and a wiring process by using a cross active layout structure. CONSTITUTION: A layout structure of a memory cell comprises a semiconductor substrate, an active area, a plurality of first word line(121-128), a plurality of second word line(221-224); and a couple of bit line(11a,11b). The active area is formed with a plurality of cross line. The first word line runs to a longitudinal direction of the active area. The second word line runs to another longitudinal direction of the active area. The second word line is perpendicular to the first word line. The bit line couple is formed on the active area. The bit line couple is perpendicular to the first word line direction.
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