WORD LINE DRIVING CIRCUIT FOR MEMORY

摘要

PURPOSE: A word line driving circuit for memory is provided which enables the high speed operation of the memory. CONSTITUTION: A word line driving circuit for memory reduces the pre-charge time by applying a high voltage(VPP) or a power source voltage(VCC) as a driving voltage to a word line driving part by receiving an address transition detection signal(ATD). The circuit comprises: a high voltage generation part(2) generating the high voltage; a control part(5) generating a power source voltage control signal by the ATD signal generated according to the variation of the address; a power source selection part(10) applying the power source voltage or the high voltage being output from the high voltage generation part by the power source control signal being output from the control part to a word line driving part(3) selectively; and the word line driving part driving a word line of a memory cell by receiving the high voltage or the power source voltage through the power source selection part.