| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing work method capable of flatening a workpiece surface in a high degree to an extent with no abnormal protrusion on the surface. SOLUTION: In this polishing work method, a polishing tape T formed with a polishing layer fixing cerium oxide powder as an abrasive grain on a tape board having flexibility is pressed to a surface of a workpiece while supplying a solution L having hydroxyl group to the surface of the workpiece D and made to run. The solution L supplied to the surface of the workpiece D is a solution having a hydroxyl group of potassium hydroxide solution, sodium hydroxide solution, cesium hydroxide solution, etc. The workpiece D is made of metal or glass, preferably a glass-made or aluminum-made disk board for semiconductor wafer and magnetic recording medium formed with a wiring layer and inter-layer insulating film in the surface. |
