Production of a device for manufacturing semiconductors comprises forming a protective layer on a substrate, joining to a further substrate and alternately forming a film with high molecular weight and etching

摘要

Production of a device for manufacturing semiconductors involves forming protective layer, and placing connecting part on the substrate holder. The substrate holder has a cooling function and a negative potential with respect to a plasma potential to alternately form a film with high molecular weight and etch with an activated ion, which is produced in the plasma, on the connecting part; and removing the protective layer. Production of a device for manufacturing semiconductors comprises: forming a protective layer with high heat conductivity on the surface of a graduated difference part of a first substrate, which has a graduated difference on its back side; preparing a connecting part by joining a second substrate with low heat conductivity on the rear surface of the first substrate; placing the connecting part on a substrate holder having a cooling function and a negative potential with respect to a plasma potential to alternately form a film with high molecular weight and etch with an activated ion, which is produced in the plasma, on the connecting part; and removing the protective layer.