发明名称 INTEGRATED CIRCUIT WITH PROTECTION AGAINST ELECTROSTATIC DAMAGE
摘要 <p>An IC having inputs and outputs for a plurality of frequency bands from a high frequency band to a low frequency band is protected from dielectric breakdown. A high-frequency section of the IC is provided with a protection circuit including a number of diode-connected transistors. In addition, individual elements in the transistors are isolated by insulator that prevents thyristor operation.</p>
申请公布号 WO2000067323(P1) 申请公布日期 2000.11.09
申请号 JP1999002279 申请日期 1999.04.28
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