发明名称 |
COMPOUND SEMICONDUCTOR STRUCTURE WITH LATTICE AND POLARITY MATCHED HETEROEPITAXIAL LAYERS |
摘要 |
A compound tetrahedrally coordinated semiconductor structure, whose chemical formula is generally of the form IInIIImIVlVpVIq, where n, m, l, p, q represent the relative abundance of each element associated with a particular group of the periodic table. The flexibility of the chemical formula may be used to adjust the lattice constant and polarity to eliminate mismatches from substrates. Other properties, such as those of band gaps, can also be tuned. The design is amenable to layer-by-layer heteroepitaxial growth. In exemplary embodiments, a structure is provided that matches lattice constant and polarity with Si(100) surface, while having a direct band gap of 1.59 mu m. |
申请公布号 |
WO9963580(A3) |
申请公布日期 |
2000.11.09 |
申请号 |
WO1999US11525 |
申请日期 |
1999.05.25 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
WANG, TAIRAN;MOLL, NIKOKAJ;CHO, KYEONGJAE;JOANNOPOULOS, JOHN, D. |
分类号 |
H01L21/20;H01L29/26;H01L31/0264;H01L31/032 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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