发明名称 |
INTEGRATED CIRCUIT WITH PROTECTION AGAINST ELECTROSTATIC DAMAGE |
摘要 |
An IC having inputs and outputs for a plurality of frequency bands from a high frequency band to a low frequency band is protected from dielectric breakdown. A high-frequency section of the IC is provided with a protection circuit including a number of diode-connected transistors. In addition, individual elements in the transistors are isolated by insulator that prevents thyristor operation. |
申请公布号 |
WO0067323(A1) |
申请公布日期 |
2000.11.09 |
申请号 |
WO1999JP02279 |
申请日期 |
1999.04.28 |
申请人 |
HITACHI, LTD.;TAKIGAWA, KUMIKO;TANAKA, SATOSHI |
发明人 |
TAKIGAWA, KUMIKO;TANAKA, SATOSHI |
分类号 |
H01L27/02;(IPC1-7):H01L27/04;H01L21/822 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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