| 摘要 |
<p>A wafer polishing method capable of preventing etching and contamination, by a polishing compound, on a wafer retaining surface when the wafer is polished on a single side, a wafer cleaning method capable of effectively removing a protection film and easily disposing of cleaning waste liquid, and a wafer protection film for suitably covering the wafer retaining surface during polishing and being effectively removed during cleaning. A polishing method which uses as a wafer protection film a synthetic resin protection film (polyvinylbutyral resin protection film) having an etching resistance against a polishing compound and a good adhesiveness to a wafer and being easily peelable after polishing; and a cleaning method consisting of a first cleaning step of cleaning a wafer polished by the above polishing method with an ozone gas-dissolved water and a second cleaning step of cleaning it with an alkaline cleaning liquid.</p> |
