Ferroelectric memory structure is produced by forming vias and conductive structures for connecting short-circuit transistors to upper capacitor electrodes

摘要

Ferroelectric memory structure production, comprising formation of vias and conductive structures for connecting short-circuit transistors to upper capacitor electrodes, is new. A ferroelectric memory structure is produced by: (a) preparing a substrate with several memory cells, each comprising selection and short-circuit transistors connected to a first electrode of a ferroelectric capacitor; (b) applying an electrically insulating layer; (c) producing a contact hole for connection to the second capacitor electrodes; (d) producing contact holes for connection of the short-circuit transistors; (e) filling the contact holes with conductive material; and (f) applying and structuring a conductive layer so that the second capacitor electrodes are connected to the short-circuit transistors.