发明名称 MELT DEPTH CONTROL FOR SEMICONDUCTOR MATERIALS GROWN FROM A MELT
摘要 <p>The invention features a method of controlling the depth of a melt for or crystal growth. According to the method, an input signal is applied through a crucible and a material disposed within the crucible. An output signal generated in response to the input signal is measured. The output signal relates to the depth of the melt. An amount of the source material introduced into the melt is adjusted to maintain the depth of the melt at a substantially constant level using the output signal.</p>
申请公布号 WO2000066817(A1) 申请公布日期 2000.11.09
申请号 US2000011638 申请日期 2000.05.01
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