Verfahren zum Strukturieren einer Metall- oder Metallsilizidschicht sowie ein mit diesem Verfahren hergestellter Kondensator

摘要

The invention relates to a method of producing a high-epsilon dielectric/ferroelectric capacitor. According to the inventive method, a structural layer (10) with a central base-layer zone (11) and a trench (13) that is filled with Si and that laterally surrounds said layer is produced. A metal layer (14) is deposited on said layer and is siliconized above the Si-filled trench (13). When the siliconized metal layer section (18) is oxidized, it migrates into the trench (13), thereby forming a base electrode (19) above the base-layer zone (11).